vishay siliconix SI4497DY new product document number: 65748 s10-0639-rev. a, 22-mar-10 www.vishay.com 1 p-channel 30 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ?trenchfet ? power mosfet ? 100 % r g tested ? 100 % uis tested ? compliant to rohs directive 2002/95/ec applications ? adaptor switch ? high current load switch ? notebook product summary v ds (v) r ds(on) ( ) i d (a) d q g (typ.) - 30 0.0033 at v gs = - 10 v - 36 90 nc 0.0046 at v gs = - 4.5 v - 29 notes: a. surface mounted on 1" x 1" fr4 board. b. t = 10 s. c. maximum under steady stat e conditions is 80 c/w. d. based on t c = 25 c. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d - 36 a t c = 70 c - 29 t a = 25 c - 24.8 a, b t a = 70 c - 19.2 a, b pulsed drain current i dm - 70 continuous source-drain diode current t c = 25 c i s - 6.5 t a = 25 c - 2.9 a, b avalanche current l = 0.1 mh i as - 30 single-pulse avalanche energy e as 45 mj maximum power dissipation t c = 25 c p d 7.8 w t c = 70 c 5.0 t a = 25 c 3.5 a, b t a = 70 c 2.2 a, b operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, c t 10 s r thja 29 35 c/w maximum junction-to-foot steady state r thjf 13 16 s s d d d s g d so-8 5 6 7 8 top view 2 3 4 1 ordering information: SI4497DY-t1-ge3 (lead (pb)-free and halogen-free) s g d p-channel mosfet www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 2 document number: 65748 s10-0639-rev. a, 22-mar-10 vishay siliconix SI4497DY new product notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 30 v v ds temperature coefficient v ds /t j i d = - 250 a - 26 mv/c v gs(th) temperature coefficient v gs(th) /t j 5.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.0 - 2.5 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v - 1 a v ds = - 30 v, v gs = 0 v, t j = 55 c - 5 on-state drain current a i d(on) v ds - 10 v, v gs = - 10 v - 30 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 20 a 0.0027 0.0033 v gs = - 4.5 v, i d = - 15 a 0.0038 0.0046 forward transconductance a g fs v ds = - 10 v, i d = - 20 a 75 s dynamic b input capacitance c iss v ds = - 15 v, v gs = 0 v, f = 1 mhz 9685 pf output capacitance c oss 995 reverse transfer capacitance c rss 995 total gate charge q g v ds = - 15 v, v gs = - 10 v, i d = - 20 a 190 285 nc v ds = - 15 v, v gs = - 4.5 v, i d = - 20 a 90 135 gate-source charge q gs 27.5 gate-drain charge q gd 26.5 gate resistance r g f = 1 mhz 0.5 2.3 4.6 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 1.5 i d ? - 10 a, v gen = - 10 v, r g = 1 19 35 ns rise time t r 13 25 turn-off delaytime t d(off) 115 200 fall time t f 25 50 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 1.5 i d ? - 10 a, v gen = - 4.5 v, r g = 1 100 180 rise time t r 75 150 turn-off delaytime t d(off) 100 180 fall time t f 42 80 drain-source body diode characteristics continous source-drain diode current i s t c = 25 c - 36 a pulse diode forward current i sm - 70 body diode voltage v sd i s = - 3 a, v gs = 0 v - 0.70 - 1.2 v body diode reverse recovery time t rr i f = - 10 a, di/dt = 100 a/s, t j = 25 c 31 60 ns body diode reverse recovery charge q rr 23 45 nc reverse recovery fall time t a 13 ns reverse recovery rise time t b 18 www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 65748 s10-0639-rev. a, 22-mar-10 www.vishay.com 3 vishay siliconix SI4497DY new product typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 14 28 42 56 70 0.0 0.5 1.0 1.5 2.0 2.5 v gs =10vthru4v v gs =3v v ds - drain-to-source voltage (v) - drain current (a) i d 0.0020 0.0025 0.0030 0.0035 0.0040 0.0045 0 1632486480 v gs =4.5v v gs =10v - on-resistance ( ) r ds(on) i d - drain current (a) 0 2 4 6 8 10 0 40 80 120 160 200 v ds =20v i d =20a v ds =10v v ds =15v - gate-to-source voltage (v) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 012345 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d c rss 0 2400 4800 7200 9600 12 000 0 6 12 18 24 30 c iss c oss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 i d =20a v gs =4.5v v gs =10v t j - junction temperature (c) (normalized) - on-resistance r ds(on) www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 4 document number: 65748 s10-0639-rev. a, 22-mar-10 vishay siliconix SI4497DY new product typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s - 0.4 - 0.1 0.2 0.5 0.8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a i d =5ma variance (v) v gs(th) t j - temperature (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.000 0.004 0.008 0.012 0.016 0.020 0246810 t j =25 c i d =20a t j = 125 c - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) 0 40 80 120 160 200 10 1 1 0 0 . 00.01 time (s) power (w) 0.1 safe operating area 0.01 100 1 100 0.01 0.1 1ms 10 s 10 ms 0.1 1 10 10 t a = 25 c single pulse dc bvdss limited 1s 100 ms limited by r ds(on) * v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specied - drain current (a) i d www.datasheet.co.kr datasheet pdf - http://www..net/
vishay siliconix SI4497DY document number: 65748 s10-0639-rev. a, 22-mar-10 www.vishay.com 5 new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 8 16 24 32 40 0 255075100125150 t c - case temperature (c) i d - drain current (a) power derating, junction-to-foot 0 2 4 6 8 10 0 25 50 75 100 125 150 t c - case temperature (c) power (w) power derating, junction-to-ambient 0.0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 t a - ambient temperature (c) power (w) www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 6 document number: 65748 s10-0639-rev. a, 22-mar-10 vishay siliconix SI4497DY new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65748 . normalized thermal transient impedance, junction-to-ambient 10 -2 0 0 0 1 0 1 1 10 -1 10 -3 100 0.2 0.1 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.01 duty cycle = 0.5 t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 80 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted 0.05 0.02 single pulse normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.01 0.05 single pulse 0.02 www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners. www.datasheet.co.kr datasheet pdf - http://www..net/
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